Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer
Author:
Affiliation:
1. State key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China
2. School of Mechanical and Electrical Engineering, Xidian University, Xi'an, China
Funder
National Key R&D Program of China
National Science Basic Research Program of Shaanxi
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
State Key Laboratory on Integrated Optoelectronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/4563994/10101698/10138550.pdf?arnumber=10138550
Reference28 articles.
1. Greatly Enhanced Wall-Plug Efficiency of N-polar AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
2. Improving the Light-Extraction Efficiency of AlGaN DUV-LEDs by Using a Superlattice Hole Spreading Layer and an Al Reflector
3. Performance evaluation of tunnel junction-based N-polar AlGaN deep-ultraviolet light-emitting diodes
4. Numerical Investigation on the Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Superlattice p-Type Doping
5. On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Study of ultraviolet light emitting diodes with InGaN quantum dots and lattice matched superlattice electron blocking layers;Optics Express;2024-01-30
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