A P-Channel MOSFET on 4H-SiC-Reference-Cited by-同舟云学术

A P-Channel MOSFET on 4H-SiC

Published:2004-06 Issue: Volume:457-460 Page:1401-1404
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Han Ji Sheng¹,Cheong K.Y.¹,Dimitrijev Sima¹,Laube Michael²,Pensl Gerhard³

Affiliation:

1. Griffith University

2. University of Erlangen-Nürnberg

3. Friedrich-Alexander-Universität Erlangen-Nürnberg

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.1401.pdf

Reference8 articles.

1. Kondo Y., Takhashi, T., Ishii K., Hayashi Y., Sakuma E., Misawa H., Daimon H., Yamanaka M., and Yoshida S.: Experimental 3C-SiC MOSFET, IEEE Electron Device Lett. EDL-7, (1986), pp.404-406.

2. Mater. Sci. Forum 389-393, (2002).

3. Slater D. B. Jr., Lipkin L. A., Johnson G. M., Suvorov A. V., and Palmour J. W.: MMOS and PMOS high temperature enhancement-mode devices and circuits in 6H-SiC, Inst. Phys. Con. Ser. Vol. 142, (1996), pp.805-808.

4. Cheong K. Y., Dimitrijev S., and Han, J: Effects of initial nitridation on the characteristics of SiC-SiO2 interface, Mater. Sci. Forum, - in press.

5. Cheong K. Y., Dimitrijev S., and Han, J.: Electrical and physical characterizations of gate oxides on 4H-SiC grown in diluted N2O, J. Appl. Phys., - in press.

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