Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel-Reference-Cited by-同舟云学术

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Characteristics of 4H-SiC n- and p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel

Published:2012-02-20 Issue:2 Volume:51 Page:02BF05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okamoto Mitsuo,Iijima Miwako,Nagano Takahiro,Fukuda Kenji,Okumura Hajime

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference17 articles.

1. High-voltage double-implanted power MOSFET's in 6H-SiC

2. SiC Integrated MOSFETs

3. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs

4. Lateral RESURF MOSFET Fabricated on 4H-SiC<tex>$(000bar1)$</tex>C-Face

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1. A review of silicon carbide CMOS technology for harsh environments;Materials Science in Semiconductor Processing;2024-08

2. Characterization of 4H-SiC PMOSFET with P⁺ Poly-Si Gate;2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT);2023-04-17

3. Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs;Japanese Journal of Applied Physics;2022-02-01

4. High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors;Journal of Applied Physics;2021-12-14

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