Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on 4H-SiC C-Face
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
1. High-voltage double-implanted power MOSFET's in 6H-SiC
2. SiC Integrated MOSFETs
3. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs
4. Lateral RESURF MOSFET Fabricated on 4H-SiC<tex>$(000bar1)$</tex>C-Face
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Well-behaved 4H-SiC PMOSFET with LOCal oxidation of SiC (LOCOSiC) isolation structure and compromised gate oxide for Sub-10V SiC CMOS application;Solid-State Electronics;2020-04
2. C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance;Materials Science Forum;2014-02
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