Affiliation:
1. University of Tsukuba
2. National Institute of Advanced Industrial Science and Technology (AIST)
3. Japan Atomic Energy Agency (JAEA)
Abstract
This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(000-1) “C face” MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO2 structures.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献