Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3644156
Reference16 articles.
1. Bonding at theSiC−SiO2Interface and the Effects of Nitrogen and Hydrogen
2. Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation
3. Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing
4. What can electron paramagnetic resonance tell us about the Si/SiO[sub 2] system?
5. Identification of the Carbon Dangling Bond Center at the4H−SiC/SiO2Interface by an EPR Study in Oxidized Porous SiC
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