Fabrication and Electrical Properties of Thermally Oxidized p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on 4H-SiC C-Face
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference20 articles.
1. High-voltage double-implanted power MOSFET's in 6H-SiC
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4. Lateral RESURF MOSFET Fabricated on 4H-SiC<tex>$(000bar1)$</tex>C-Face
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3. Well-behaved 4H-SiC PMOSFET with LOCal oxidation of SiC (LOCOSiC) isolation structure and compromised gate oxide for Sub-10V SiC CMOS application;Solid-State Electronics;2020-04
4. Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review;Materials Science in Semiconductor Processing;2018-05
5. Slow response in gate current–voltage characteristics of metal–oxide–semiconductor structures on the 4H-SiC$(000\bar{1})$ face;Japanese Journal of Applied Physics;2016-04-20
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