Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt
Author:
Affiliation:
1. IMB-CNM, CSIC
2. Université Claude Bernard Lyon 1
3. Université Montpellier
4. Université de Lyon
5. Université Montpellier 2
6. Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications CNRS
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.483-485.421.pdf
Reference3 articles.
1. C. Jacquier, G. Ferro, C. Balloud, M. Zielinski, J. Camassel, E.K. Polychroniadis; J. Stoemenos, F. Cauwet and Y. Monteil, Mater. Sci. Forum Vol. 457-460 (2004), pp.735-738.
2. C. Jacquier, G. Ferro, F. Cauwet, D. Chaussende, Y. Monteil, Crystal Growth & Design 3(3) (2003) 285-287.
3. P. Godignon, X. Jordá, R. Nipoti, G. Cardinali, N. Mestres, Mater. Sci. Forum, Vol. 389-393 (2002), pp.1317-1320.
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