SiC Homoepitaxial Growth at Low Temperature by Vapor−Liquid−Solid Mechanism in Al−Si Melt-Reference-Cited by-同舟云学术

SiC Homoepitaxial Growth at Low Temperature by Vapor−Liquid−Solid Mechanism in Al−Si Melt

Published:2003-03-01 Issue:3 Volume:3 Page:285-287
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Jacquier Christophe¹,Ferro Gabriel¹,Cauwet François¹,Chaussende D.¹,Monteil Yves¹

Affiliation:

1. Laboratoire des Multimatériaux et Interfaces (UMR 56-15), Université Claude Bernard Lyon 1, 43 Boulevard du 11 novembre 1918, 69622 Villeurbanne (France), and NOVASiC, Savoie Technolac, BP267, 73375 Le Bourget Cedex, France

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg0256069

Reference12 articles.

1. Jacquier C.; Ferro G.; Cauwet F.; Viala J. C.; Monteil Y.Mater. Sci. Forum2003, accepted for publication.

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