Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping
Author:
Affiliation:
1. Crystal Growth Lab; Materials Department 6 (i-meet); University of Erlangen-Nürnberg; Erlangen Germany
2. Fraunhofer Institute for Integrated Circuits; Development Center for X-Ray Technology (EZRT); Fürth 90768 Germany
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
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