Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication-Reference-Cited by-同舟云学术

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Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication

Published:2002-04 Issue: Volume:389-393 Page:1317-1320
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Godignon Phillippe¹,Jordá Xavier¹,Nipoti Roberta²^ORCID,Cardinali G.C.³,Mestres Narcis⁴

Affiliation:

1. IMB-CNM, CSIC

2. CNR-IMM Sezione di Bologna

3. CNR-IMM

4. Imperial College London

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.1317.pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers;Materials Science Forum;2007-09

2. Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt;Materials Science Forum;2005-05

3. Low Voltage Silicon Carbide Zener Diode;Materials Science Forum;2004-06

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