Incorporation of group III, IV and V elements in 3C–SiC(111) layers grown by the vapour–liquid

Incorporation of group III, IV and V elements in 3C–SiC(111) layers grown by the vapour–liquid–solid mechanism

Published:2010-11 Issue:23 Volume:312 Page:3443-3450
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lorenzzi J.,Zoulis G.,Marinova M.,Kim-Hak O.,Sun J.W.,Jegenyes N.,Peyre H.,Cauwet F.,Chaudouët P.,Soueidan M.,Carole D.,Camassel J.,Polychroniadis E.K.,Ferro G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. Strain Tailoring in 3C-SiC Heteroepitaxial Layers Grown on Si(100)

2. Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions

3. Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition

4. Interface structures of epitaxial β-SiC on α-SiC substrates

5. A Vapor–Liquid–Solid Mechanism for Growing 3C-SiC Single-Domain Layers on 6H-SiC(0001)

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