Interface structures of epitaxial β-SiC on α-SiC substrates

Author:

Chien Fen-Ren,Nutt Steven R.,Sik Yoo Woo,Kimoto Tsunenobu,Matsunami Hiroyuki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Progress in the study of polytypism in crystals (I)

2. Silicon Carbide Ceramics - 1;Inomata,1991

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1. 3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail;Critical Reviews in Solid State and Materials Sciences;2014-09-25

2. Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC;ECS Journal of Solid State Science and Technology;2014

3. Cubic SiC formation on the C-face of 6H–SiC (0001) substrates;Journal of Crystal Growth;2012-06

4. Nucleation Control of Cubic Silicon Carbide on 6H- Substrates;Crystal Growth & Design;2011-12-13

5. MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001);Journal of The Electrochemical Society;2011-04-04

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