Cubic SiC formation on the C-face of 6H–SiC (0001) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Graphene Formation on a 3C-SiC(111) Thin Film Grown on Si(110) Substrate
2. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
3. Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers
4. Interface structures of epitaxial β-SiC on α-SiC substrates
5. CVD Growth of 3C-SiC on 4H/6H Mesas
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1. Ultrafine Si evaporation control technology to inhibit the island nucleation of epitaxial graphene on SiC (000-1);Journal of Crystal Growth;2024-09
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3. Cathodoluminescence Study of 3C-SiC Epilayers Grown on 4H-SiC Substrates;Journal of Electronic Materials;2023-03-16
4. Structural characteristics of 3C–SiC thin films grown on Si-face and C-face 4H–SiC substrates by high temperature chemical vapor deposition;Vacuum;2023-01
5. Quantitative Analysis of Contact Angle of Water on SiC: Polytype and Polarity Dependence;ECS Journal of Solid State Science and Technology;2020-11-30
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