Structural characteristics of 3C–SiC thin films grown on Si-face and C-face 4H–SiC substrates by high temperature chemical vapor deposition
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference44 articles.
1. Band structure properties, phonons, and exciton fine structure in 4H-SiC measured by wavelength-modulated absorption and low-temperature photoluminescence;Klahold;Phys. Rev. B,2020
2. Exploration of solid phase epitaxy of 3C-SiC on silicon;Zielinski;Mater. Sci. Forum,2020
3. New approaches and understandings in the growth of cubic silicon carbide;La Via;Materials,2021
4. Charge state control of the silicon vacancy and divacancy in silicon carbide;Son;J. Appl. Phys.,2021
5. Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications;Renz;Semicond. Sci. Technol.,2021
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1. Ultrahigh growth rate-induced thick 3C-SiC heteroepitaxial layers on 4H-SiC and its oxidation characteristics;Vacuum;2024-11
2. Simultaneous electric dipoles and flat-band voltage modulation in 4H-SiC MOS capacitors through HfO2/SiO2 interface engineering;Journal of Physics D: Applied Physics;2024-06-24
3. High-throughput thermodynamic study of SiC high-temperature chemical vapor deposition from TMS-H2;Journal of Crystal Growth;2024-01
4. Advanced approach of bulk (111) 3C-SiC epitaxial growth;Microelectronic Engineering;2024-01
5. Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps;Crystals;2023-07-19
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