Author:
Neudeck P. G.,Trunek A. J.,Spry D. J.,Powell J. A.,Du H.,Skowronski M.,Huang X. R.,Dudley M.
Subject
Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry
Reference44 articles.
1. SiC materials-progress, status, and potential roadblocks
2. Bulk Crystal Growth, Epitaxy, and Defect Reduction in Silicon Carbide Materials for Microwave and Power Devices
3. J. A. Powell, P. Pirouz, W. J. Choyke, in Semiconductor Interfaces, Microstructures, and Devices: Properties and Applications (Ed: Z. C. Feng), Institute of Physics Publishing, Bristol, UK 1993, p. 257.
4. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
5. Stacking fault energy of 6H-SiC and 4H-SiC single crystals
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