Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt-Reference-Cited by-同舟云学术

Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt

Published:2004-06 Issue: Volume:457-460 Page:735-738
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Jacquier Christophe¹,Ferro Gabriel²,Balloud Carole³,Zielinski Marcin⁴,Camassel Jean⁵,Polychroniadis Efstathios K.⁶,Stoemenos J.⁷,Cauwet François²,Monteil Yves¹

Affiliation:

1. Université Claude Bernard Lyon 1

2. Université de Lyon

3. Université Montpellier

4. Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications CNRS

5. Université Montpellier 2

6. Aristotle University of Thessaloniki

7. Aristotele University of Thessaloniki

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.735.pdf

Reference10 articles.

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2. R. Yakimova, M. Syväjärvi, S. Rendakova, V. A. Dmitriev, A. Henry and E. Janzén, Mat. Sc. Forum, Vol. 338-342 (2000) p.237.

3. S. Rendakova, V. Ivantsov and V. Dmitriev, Mat. Sc. Forum, Vol. 264-268, (1998), p.163.

4. A. Syrkin, V. Dmitriev, O. Kovalenkov, D. Bauman and J. Crofton, Mat. Sc. Forum Vol. 389- 393 (2002) p.291.

5. J.M. Bluet, J. Pernot, J. Camassel, S. Contreras, J.L. Robert, J.F. Michaud and T. Billon, Journal of Applied Physics, Vol. 88(4) (2000) p. (1971).

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