Electrical Characterization of PiN Diodes with p<sup>+</sup> Layer Selectively Grown by VLS Transport-Reference-Cited by-同舟云学术

Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport

Published:2013-01 Issue: Volume:740-742 Page:911-914
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Thierry-Jebali Nicolas¹,Lazar Mihai¹,Vo-Ha Arthur¹,Carole Davy²,Soulière Véronique¹,Laariedh Farah¹,ul Hassan Jawad³,Henry Anne³^ORCID,Janzén Erik³,Planson Dominique¹,Ferro Gabriel¹,Brylinski Christian¹,Brosselard Pierre¹

Affiliation:

1. Université de Lyon

2. Université Claude Bernard Lyon 1

3. Linköping University

Abstract

This paper deals with electrical characterization of PiN diodes fabricated on an 8° off-axis 4H-SiC with a p++localized epitaxial area grown by Vapour-Liquid-Solid (VLS) transport. It provides for the first time evidence that a high quality p-n junction can be achieved by using this technique followed by a High Temperature Annealing (HTA) process.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.740-742.911.pdf

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3. F. Laariedh et al, Mater. Sci. Forum. 711 (2012), 169-173.

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