Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4809570
Reference18 articles.
1. Critical issues for interfaces to p-type SiC and GaN in power devices
2. Electrical activation of high-concentration aluminum implanted in 4H-SiC
3. Electrical and topographical characterization of aluminum implanted layers in 4H silicon carbide
4. OHMIC CONTACTS TO SIC
5. F. Laariedh, M. Lazar, P. Cremillieu, J. Leclercq, and D. Planson, inMaterials Science Forum(Trans Tech Publ, 2012), Vol. 711, pp. 169–173.
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1. Mechanisms of Ohmic Contact Formation of Ti/Al-Based Metal Stacks on p-Doped 4H-SiC;Materials;2021-12-22
2. Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600 °C;Microelectronics Reliability;2020-07
3. A critical review of theory and progress in Ohmic contacts to p-type SiC;Journal of Crystal Growth;2020-02
4. Further optimization of VLS localized epitaxy for deeper 4H-SiC p-n junctions;physica status solidi (a);2017-01-31
5. A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2Phase;IEEE Transactions on Electron Devices;2016-06
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