Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters
Author:
Affiliation:
1. National Institute of Materials Physics
2. Institut für Kristallzüchtung im Forschungsverbund Berlin e.V.
3. Infineon Technologies AG
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.433-436.463.pdf
Reference11 articles.
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3. A. Kawasuso, F. Redman, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl, P. Sperr, W. Triftshäuser and H. Itoh: Appl. Phys. Lett. 79 (2001), p.3950.
4. K. Fujihira, T. Kimoto and H. Matsunami: Appl. Phys. Lett. 80 (2002), p.1586.
5. T. Kimoto, S. Nakazawa, K. Hashimoto and H. Matsunami: Appl. Phys. Lett. 79 (2001), p.2761.
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