Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy-Reference-Cited by-同舟云学术

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

Published:1997-07 Issue:1 Volume:162 Page:199-225
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Dalibor T.,Pensl G.,Matsunami H.,Kimoto T.,Choyke W. J.,Schöner A.,Nordell N.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference53 articles.

1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

2. Landolt-Börnstein, New Series, Group III, Vol. 22, Part b, Semiconductors. Impurities and Defects in Group IV Elements and III-V Compounds, Ed. and , Springer-Verlag, Berlin 1989 (p. 68).

3. Fast computer‐controlled deep level transient spectroscopy system for versatile applications in semiconductors

4. Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition

5. Growth mechanism of 6H‐SiC in step‐controlled epitaxy

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