Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes
Author:
Affiliation:
1. Micro-Fabrication and Characterization Lab, School of Electrical Sciences, IIT Bhubaneswar, Odisha 752050, India
2. Electrical Engineering, IIT Tirupati, Tirupati, Andhra Pradesh 517506, India
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5003068
Reference49 articles.
1. See NASA Technical Report No. NASA/TM-2013-216516, E-18671, GRC-E-DAA-TN8288 (J. D. Wrbanek, S. Y. Wrbanek, and G. C. Fralick, Advanced Space Radiation Detector Technology Development, 2013).
2. See NASA Technical Report No. 9342, Novel Silicon Carbide Deep Ultraviolet Detectors: Device Modeling, Characterization, Design and Prototyping Project, 2015.
3. Silicon carbide X-ray detectors for planetary exploration
4. Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons
5. Improved n-Type 4H-SiC Epitaxial Radiation Detectors by Edge Termination
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