Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics

Author:

Lelis Aivars J.1,Green Ronald1,Habersat Daniel B.1ORCID,Goldsman Neil2

Affiliation:

1. U.S. Army Research Laboratory

2. University of Maryland

Abstract

We have observed a noticeable increase in the instability of the I-V characteristics following an ON-state current stress, especially in the subthreshold region. An increased stretch-out and negative shift can give rise to increased leakage current in the OFF-state if proper precautions are not met to provide a proper margin for the threshold voltage. State-of-the-art 50-A MOSFETs exhibit less instability than previous 20-A devices, and devices that run hotter show a larger degradation.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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