Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors

Published:2015-07-28 Issue:4 Volume:118 Page:044507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ettisserry D. P.^ORCID,Goldsman N.,Akturk A.,Lelis A. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4927619

Reference59 articles.

1. Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

2. Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using Fast $I$–$V$ Techniques

3. Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures

4. Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs

5. Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs

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1. Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress;IEEE Transactions on Electron Devices;2023-12

2. Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs;Microelectronics Reliability;2022-11

3. Impact of post-nitridation annealing in CO₂ ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors;Applied Physics Express;2022-05-24

4. Analysis and Modeling of V_th Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

5. Bias temperature instability in SiC metal oxide semiconductor devices;Journal of Physics D: Applied Physics;2021-01-19