Electrically detected magnetic resonance study of NBTI in 4H-SiC MOSFETs
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7041331/7049485/07049497.pdf?arnumber=7049497
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability;Review of Scientific Instruments;2022-11-01
2. Electrically detected magnetic resonance study of barium and nitric oxide treatments of 4H-SiC metal-oxide-semiconductor field-effect transistors;Journal of Applied Physics;2019-10-14
3. Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs;IEEE Transactions on Electron Devices;2017-03
4. Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors;Journal of Applied Physics;2015-07-28
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