Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress-Reference-Cited by-同舟云学术

Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

Published:2023-12 Issue:12 Volume:70 Page:6473-6479
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ma Dezhi¹,He Zhiyuan²^ORCID,Chen Yuan²^ORCID,Shi Yijun²^ORCID,Wang Jian¹,Yang Chao¹,Zhang Mowen¹,Shen Yutong²^ORCID,He Liang³^ORCID,Lu Guoguang²,Yang Jia-Yue¹^ORCID

Affiliation:

1. School of Energy and Power Engineering, Shandong University, Jinan, China

2. China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China

3. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI), Guangzhou, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Foundation for Outstanding Youth in Natural Science of Guangdong Province

Chongqing Municipal Natural Science Foundation

GuangZhou Basic and Applied Basic Research Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10287274.pdf?arnumber=10287274

Reference28 articles.

1. Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique

2. Effect of Gate-Oxide Degradation on Electrical Parameters of Silicon Carbide MOSFETs

3. Interfacial damage extraction method for SiC power MOSFETs based on C-V characteristics

4. Gate Oxide Instability against a Wide Range of Negative Electric Field Stress of SiC MOSFETs

5. Comparative Investigation of Surge Current Capabilities of Si IGBT and SiC MOSFET for Pulsed Power Application