Author:
Lelis Aivars,Green Ron,El Mooro,Habersat Dan
Abstract
Results are presented indicating a disparity in the response of different vendors’ commercially available SiC power MOSFETs to bias temperature stressing. In addition, it was observed that bias-temperature stress under negative gate bias led to larger shifts in the threshold voltage than under positive gate bias.
Publisher
The Electrochemical Society
Cited by
1 articles.
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