SiC MOSFET threshold-stability issues
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference46 articles.
1. Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements;Lelis;IEEE Trans. Electron Dev.,2008
2. Reliability issues of SiC MOSFETs: a technology for high-temperature environments;Yu;IEEE Trans. Dev. Mater. Reliab.,2010
3. A new degradation mechanism in high-voltage SiC power MOSFETs;Agarwal;IEEE Electron Dev. Lett.,2007
4. Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs;Nakao;Mat. Sci. Forum,2009
5. Short-Circuit Robustness Testing of SiC MOSFETs;Green;Mater. Sci. Forum,2017
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