Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT-Reference-Cited by-同舟云学术

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

Published:2014-02 Issue: Volume:778-780 Page:135-138
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Miyazawa Tetsuya¹,Ji Shi Yang²,Kojima Kazutoshi²,Ishida Yuuki²,Nakayama Koji³,Tanaka Atsushi³,Asano Katsunori³,Tsuchida Hidekazu¹

Affiliation:

1. Central Research Institute of Electric Power Industry (CRIEPI)

2. National Institute of Advanced Industrial Science and Technology

3. Kansai Electric Power Co., Inc.

Abstract

The epitaxial growth of thick multi-layer 4H-SiC to fabricate very high-voltage C-face n-channel IGBTs is demonstrated using 3-inch diameter wafers. We employ an inverted-growth process, which enables the on-state voltage of resultant IGBTs to be reduced. Furthermore a long minority carrier lifetime (> 10 μs) and a low-resistance p+epilayer can reduce the forward voltage drop of the IGBTs. The small forward voltage drop is demonstrated particularly at high temperatures by fabricating and characterizing simple pin diodes using the epi-wafer.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.135.pdf

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