High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers-Reference-Cited by-同舟云学术

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High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers

Published:2010-02 Issue:2 Volume:57 Page:511-515
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Xiaokun,Cooper James A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5393266/05373866.pdf?arnumber=5373866

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3. The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

4. Power Loss Reduction of N-Channel 10-kV SiC IGBTs With Box Cell Layout;IEEE Transactions on Electron Devices;2023-07

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