Two-Dimensional Roughness Growth at Surface and Interface of SiO<sub>2</sub> Films during Thermal Oxidation of 4H-SiC(0001)-Reference-Cited by-同舟云学术

Two-Dimensional Roughness Growth at Surface and Interface of SiO₂ Films during Thermal Oxidation of 4H-SiC(0001)

Published:2012-05 Issue: Volume:717-720 Page:785-788
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Hasunuma Ryu¹,Fukasawa Tatsuya¹,Kosugi Ryouji²,Ishida Yuuki²,Yamabe Kikuo¹

Affiliation:

1. University of Tsukuba

2. National Institute of Advanced Industrial Science and Technology (AIST)

Abstract

The surface and interface roughness of SiO2/4H-SiC(0001) was investigated in terms of Si emission from the interface and oxidation induced compressive stress. It was demonstrated that the SiO2 surface roughness growth was strongly related with oxidation mechanism, as well as SiO2 on Si substrate. A model for surface roughening was proposed with areal Si density and Young’s modulus to inclusively explain the surface roughness of SiO2 on various substrates.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.717-720.785.pdf

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