A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=2/a=021203/pdf
Reference15 articles.
1. Intrinsic SiC/SiO2 Interface States
2. Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer
3. Growth Rate Enhancement of (000\bar1)-Face Silicon–Carbide Oxidation in Thin Oxide Regime
4. Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
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