Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer

Author:

Kakubari K.1,Kuboki R.1,Hijikata Yasuto1,Yaguchi Hiroyuki1,Yoshida Sadafumi1

Affiliation:

1. Saitama University

Abstract

Real time observation of SiC oxidation was performed using an in-situ ellipsometer over the temperature range from 900°C to 1150°C. The relations between oxide thickness and oxidation time were obtained precisely by virtue of the real time measurements. We analyzed the relations between oxide thickness and oxidation time by applying the Deal and Grove model to obtain the linear and parabolic rate constants. Taking advantage of in-situ measurements, we successfully obtained the oxidation rate constants with high accuracy.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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