Oxidation of 6H-? Silicon Carbide Platelets-Reference-Cited by-同舟云学术

Oxidation of 6H-? Silicon Carbide Platelets

Published:1975-01 Issue:1-2 Volume:58 Page:7-9
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J American Ceramic Society

Author:

HARRIS RICHARD C. A.

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1151-2916.1975.tb18969.x/fullpdf

Reference10 articles.

1. H. C. Chang, D. N. Formegoni, and J. S. Roberts , "Design, Development, and Fabrication of Prototype Semiconductor Amplifiers." Final Report, Contract NASE-11861, National Aeronautics and Space Administration, March1966 ; p.141 .

2. Oxidation of Silicon Carbide

3. Oxidation of Silicon Carbide in the Temperature Range 1200 to 1500°

4. The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10[sup −3] to 5 × 10[sup −1] Torr Oxygen Pressure

5. General Relationship for the Thermal Oxidation of Silicon

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