Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. Intrinsic SiC/SiO2 Interface States
2. Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer
3. General Relationship for the Thermal Oxidation of Silicon
4. Growth of SiO2on SiC by dry thermal oxidation: mechanisms
5. Modified Deal Grove model for the thermal oxidation of silicon carbide
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