Abstract
A mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed. The dependence of the GaN film and the uniformity of the deposited layers on the inlet flow is investigated. Based on the simulation results, the uniformity of the precursor distribution is better, with the increasment of the inlet flow, so the quality of GaN film is superior.
Publisher
Trans Tech Publications, Ltd.