Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer-Reference-Cited by-同舟云学术

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Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer

Published:2013-05 Issue: Volume:370 Page:109-113
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hwang Jeongwoo,Lee Kwanjae,Kim Jin Soo,Lee Cheul-Ro,Lee In-Hwan,Lee Kwangjae,Lee Jin Hong,Leem Jae-Young,Kim Jong Su,Ryou Jae-Hyun,Dupuis Russell D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

2. Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

3. Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

4. Critical thickness calculations for InGaN/GaN

5. Theoretical studies of the influence of structural inhomogeneities on the radiative recombination time in polar InGaN quantum wells

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1. DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors;Materials Science;2019-12-18

2. Flower-Like Internal Emission Distribution of LEDs with Monolithic Integration of InGaN-based Quantum Wells Emitting Narrow Blue, Green, and Red Spectra;Scientific Reports;2017-08-02

3. Synthesis and Characterization of Borides, Carbides, and Nitrides and Their Applications;Materials Under Extreme Conditions;2017

4. Simulation of the Effecion of Inlet Flow on Precursor Distribution;Applied Mechanics and Materials;2014-08

5. Numerical Simulation of the Effection of Inlet Velocity in GaN Growth by MOCVD;Applied Mechanics and Materials;2014-05

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