Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells-Reference-Cited by-同舟云学术

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Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

Published:2000-11-06 Issue:19 Volume:77 Page:2988-2990
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Yen-Sheng,Ma Kung-Jeng,Hsu C.,Feng Shih-Wei,Cheng Yung-Chen,Liao Chi-Chih,Yang C. C.,Chou Chang-Cheng,Lee Chia-Ming,Chyi Jen-Inn

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1323542

Reference15 articles.

1. Structural and optical characteristics of InxGa1−xN/GaN multiple quantum wells with different In compositions

2. Photoluminescence and photoluminescence excitation spectra of In/sub 0.2/Ga/sub 0.8/N-GaN quantum wells: comparison between experimental and theoretical studies

3. Exciton localization in InGaN quantum well devices

4. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

5. Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser

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