Nanoscopic analysis of rapid thermal annealing effects on InGaN grown over Si(111)
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Publisher
Elsevier BV
Reference32 articles.
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2. High cubic phase purity and growth mechanism of cubic InN thin-films by Migration Enhanced Epitaxy;Casallas-Moreno;Thin Solid Films,2018
3. Study of the heavily p-type doping of cubic GaN with Mg;Hernández-Gutiérrez;Sci. Rep.,2020
4. Cubic InxGa1− xN/GaN quantum wells grown by migration enhanced epitaxy (MEE) and conventional molecular beam epitaxy (MBE);Camacho-Reynoso;J. Alloys Compd.,2022
5. Indium incorporation at InxGa1-xN relaxed self-assembled nanostructures on Si substrates;de Melo;Mater. Sci. Semicond. Process.,2022
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