Theoretical study of N-face InGaN light-emitting diodes with GaN–InGaN–GaN barrier near p-side and n-side-Reference-Cited by-同舟云学术

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Theoretical study of N-face InGaN light-emitting diodes with GaN–InGaN–GaN barrier near p-side and n-side

Published:2014-01 Issue: Volume:65 Page:1-6
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Yang G.F.,Dong K.X.,Zhu H.X.,Guo Y.,Yan D.W.,Wang F.X.,Li G.H.,Gao S.M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Prospects for LED lighting

2. Natural white light

3. Solid-State Light Sources Getting Smart

4. Enhanced Output Power of InGaN-Based Light-Emitting Diodes With AlGaN/GaN Two-Dimensional Electron Gas Structure

5. Effect of normal and reversed polarizations on optical characteristics of ultraviolet-violet InGaN laser diodes

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2. Red light emitting diodes based on the type-II InGaN-ZnSnN2/GaN quantum wells;Materials Science in Semiconductor Processing;2018-08

3. Characteristics of deep ultraviolet AlGaN-based light emitting diodes with p-hBN layer;Physica E: Low-dimensional Systems and Nanostructures;2016-01

4. A flexible giant magnetoimpedance-based biosensor for the determination of the biomarker C-reactive protein;Microchimica Acta;2015-08-08

5. A new analytical model of single-stage microleverage mechanism in resonant accelerometer;Microsystem Technologies;2015-04-18

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