Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices-Reference-Cited by-同舟云学术

Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices

Published:2015-10 Issue: Volume:242 Page:449-458
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Simoen Eddy,Cretu Bogdan¹,Fang Wen²,Aoulaiche Marc³,Routoure Jean Marc⁴,Carin Regis⁴,Luo Jun⁵,Zhao Chao⁶,Claeys Cor

Affiliation:

1. ENSICAEN, UMR 6072 GREYC

2. Imnstitute of Microelectronics (Imecas)

3. Micron Technology Belgium

4. University of Caen

5. Institute of Microelectroncis (Imecas)

6. Institute of Microelectronics (Imecas)

Abstract

The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined and illustrated for the case of traps in Ultra-Thin Buried Oxide Silicon-on-Insulator nMOSFETs and for vertical polycrystalline silicon nMOSFETs. It will be shown that for scaled devices the GR noise is originating from a single defect, giving rise to a so-called Random Telegraph Signal (RTS). Several methods will be described for an accurate extraction of the RTS parameters (amplitude, up and down time constant). It will be demonstrated that besides the deep-level parameters also the position of the trap in the channel can be derived from a numerical modeling of the RTS amplitude.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.242.449.pdf

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