Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2732685
Reference26 articles.
1. Frontiers of silicon-on-insulator
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5. Gate-induced floating body effect excess noise in partially depleted SOI MOSFETs
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4. Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation;IEEE Transactions on Electron Devices;2020-08
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