Author:
Hu Linna,He Liang,Chen Hua,Jia Xiaofei,Hu Ying,Ma Hongmei,Guo Dandan,Qin Yu
Publisher
Springer Science and Business Media LLC
Reference6 articles.
1. Fine B V, Bakker J P R, Dijkhuis J I. Long-range potential fluctuations and 1/f noise in hydrogenated amorphous silicon. Phys Rev B, 2003, 12: 409–412
2. He L, Chen H, Sun P, et al. Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices. Sci China Inf Sci, 2016, 59: 042402
3. Xiong S Z, Zhu M F. Fundamentals and Applications of Solar Cells. Beijing: Science Press, 2009
4. Zhuang Y Q, Sun Q. Noise and its Minimizing Technology in Semiconductor Devices. Beijing: National Defense Industry Press, 1993
5. Simoen E, Cretu B, Fang W, et al. Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices. Solid State Phenom, 2015, 242: 449–458
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献