Device Performance as a Metrology Tool to Detect Metals in Silicon-Reference-Cited by-同舟云学术

Device Performance as a Metrology Tool to Detect Metals in Silicon

Published:2019-08-08 Issue:17 Volume:216 Page:1900126
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Claeys Cor¹^ORCID,Simoen Eddy²

Affiliation:

1. Department of Electrical EngineeringKU Leuven Kasteelpark Arenberg 10 3001 Leuven Belgium

2. UPM DepartmentImec Kapeldreef 75 B-3001 Leuven Belgium

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900126

Reference47 articles.

1. Metal Impurities in Silicon- and Germanium-Based Technologies

2. Mechanisms of transition-metal gettering in silicon

3. Contamination control and ultrasensitive chemical analysis

4. Review—Characterization of Metal-Contamination Effects in Silicon

5. Heavy Metal Contamination from Resists during Plasma Stripping

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