Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma
Author:
Affiliation:
1. Lawrence Livermore National Laboratory, Livermore, CA, USA
Funder
Lawrence Livermore National Laboratory
Publisher
Informa UK Limited
Subject
General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/21663831.2020.1847735
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