Author:
Zhang Y.,Sun M.,Piedra D.,Hu J.,Liu Z.,Lin Y.,Gao X.,Shepard K.,Palacios T.
Cited by
47 articles.
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1. 1 kV Self-Aligned Vertical GaN Superjunction Diode;IEEE Electron Device Letters;2024-01
2. High-breakdown-voltage GaN-based vertical FinFET design;Journal of Power Electronics;2023-12-21
3. A Novel GaN Superjunction FinFET Power Device With a P-Type NiO Pillar for Improved Performance;IEEE Transactions on Electron Devices;2023-12
4. Study on the Influence of FS Region on the Conduction Characteristics of GaN based RC-IGBT;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
5. Superior Performances of Dynamic On-State Resistance in 1.9kV GaN-on-Sapphire HEMT;2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2023-10-27