High-breakdown-voltage GaN-based vertical FinFET design-Reference-Cited by-同舟云学术

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High-breakdown-voltage GaN-based vertical FinFET design

Published:2023-12-21 Issue: Volume: Page:
ISSN:1598-2092
Container-title:Journal of Power Electronics
language:en
Short-container-title:J. Power Electron.

Author:

Wang Zilong,Liu Liang,Qi Peiyue,Chen Jiawei,Zhao Lixia

Funder

National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://link.springer.com/content/pdf/10.1007/s43236-023-00735-8.pdf

Reference38 articles.

1. Singh, S., Kumari, P.: Vertical GaN/InGaN/GaN heterostructure tunnel field-effect transistor: DC and analog/RF performance. Int. J. Mod. Phys. B 37, 2350157 (2023)

2. Fu, H.Q., Fu, K., Yang, C., Liu, H.X., Hatch, K.A., Peri, P., Mudiyanselage, D.H., Li, B.J., Kim, T.H., Alugubelli, S.R.: Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress. Mater. Today 49, 296–323 (2021)

3. Joshi, B.C.: AlGaN/GaN heterostructures for high power and high-speed applications. Int. J. Mater. Res. 114, 712–717 (2023)

4. Su, X.B., Wang, Y., Jin, X.L., Yang, H.J.: A high performance normally-off AlGaN/GaN split-gate metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) using piezo neutralization technique. J. Nanoelectron. Optoelectron.Optoelectron. 17, 202–210 (2022)

5. Jiang, Y., Li, W., Du, F.Z., Sokolovskij, R., Zhang, Y., Shi, S., Huang, W., Wang, Q., Yu, H.Y., Wang, Z.R.: A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses. J. Mater. Chem. C. 11, 10121–10148 (2023)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compact Modeling of Power GaN Fin-JFETs I-V Characteristics using ASM-HEMT Model;2024 IEEE Texas Power and Energy Conference (TPEC);2024-02-12

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