Funder
U.S. Department of Energy
Lawrence Livermore National Laboratory
Laboratory Directed Research and Development
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference39 articles.
1. The 2018 GaN power electronics roadmap;Amano;J. Phys. D Appl. Phys.,2018
2. Wet etching of GaN, AlN, and SiC: a review;Zhuang;Mater. Sci. Eng. R Rep.,2005
3. Plasma etching of wide bandgap and ultrawide bandgap semiconductors;Pearton;J. Vac. Sci. Technol.,2020
4. Demonstration of 1.27 kV etch-then-regrow GaN p-n junctions with low leakage for GaN power electronics;Fu;IEEE Electron. Device Lett.,2019
5. Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy;Pickrell;J. Appl. Phys.,2019
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