Funder
U.S. Department of Energy
Lawrence Livermore National Laboratory
Laboratory Directed Research and Development
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference39 articles.
1. The 2018 GaN power electronics roadmap;Amano;J. Phys. D Appl. Phys.,2018
2. Wet etching of GaN, AlN, and SiC: a review;Zhuang;Mater. Sci. Eng. R Rep.,2005
3. Plasma etching of wide bandgap and ultrawide bandgap semiconductors;Pearton;J. Vac. Sci. Technol.,2020
4. Demonstration of 1.27 kV etch-then-regrow GaN p-n junctions with low leakage for GaN power electronics;Fu;IEEE Electron. Device Lett.,2019
5. Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy;Pickrell;J. Appl. Phys.,2019
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献