Plasma etching of wide bandgap and ultrawide bandgap semiconductors-Reference-Cited by-同舟云学术

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Plasma etching of wide bandgap and ultrawide bandgap semiconductors

Published:2020-03 Issue:2 Volume:38 Page:020802
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Pearton Stephen J.¹^ORCID,Douglas Erica A.²^ORCID,Shul Randy J.²,Ren Fan³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

2. Sandia National Laboratories, Albuquerque, New Mexico 87185

3. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611

Funder

National Science Foundation

Defense Threat Reduction Agency

Sandia National Laboratories

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5131343

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of high aspect ratio AlN nanopillars by top-down approach combining plasma etching and wet etching;Materials Science in Semiconductor Processing;2024-10

2. Etching of Ga₂O₃: an important process for device manufacturing;Journal of Physics D: Applied Physics;2024-09-12

3. Selective and nonselective plasma etching of (Al0.18Ga0.82)2O3/ Ga2O3 heterostructures;Journal of Vacuum Science & Technology A;2024-02-14

4. Effect of Helium Gas Addition to SF6/O2 Chemistry for SiC Dry Etching in AlGaN/GaN/SiC HEMTs;Springer Proceedings in Physics;2024

5. Fabrication of High Aspect Ratio Aln Nanopillars by Top-Down Approach Combining Plasma Etching and Wet Etching;2024

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