Influence of the carrier wafer during GaN etching in Cl2 plasma
Author:
Affiliation:
1. Université Grenoble Alpes, CNRS, LTM, F-38000 Grenoble, France
Funder
French RENATECH Network
Nano 2022
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://avs.scitation.org/doi/pdf/10.1116/6.0001478
Reference60 articles.
1. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors
2. Plasma damage in p-GaN
3. Inductively coupled plasma-induced etch damage of GaN p-n junctions
4. Investigation of effects of ion energies on both plasma-induced damage and surface morphologies and optimization of high-temperature Cl2plasma etching of GaN
5. Effect of the lattice mismatch on threading dislocations in heteroepitaxial GaN layers revealed by X-ray diffraction
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